Changxin Storage announced that the 4F² structure has made key progress and plans to launch server memory

Changxin Storage (CXMT), a Chinese memory chip company, announced that it has made key progress on a new storage architecture. Samsung Electronics and SK Hynix are also advancing similar architectures to increase storage density. The company's president, Cao Kanyu, stated at an industry event in Shanghai that Changxin Storage plans to launch new server memory products based on this architecture by the end of 2026, according to a company statement.

The architecture is designed as 4F², meaning each memory cell occupies an area of 4F², where F is the minimum line width of the semiconductor. The company claims that this proprietary transistor design can improve storage density and efficiency by accommodating more memory cells on a single chip. Currently, mainstream commercial DRAM uses a 6F² cell structure.