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first_img Ming-Chi Kuo: NVIDIA tests fiberglass-free copper-clad laminates

Tianfeng International Securities analyst Guo Mingqi published that his latest supply chain check shows that NVIDIA has begun testing fiberglass-free copper-clad laminates primarily made of hydrocarbon resin to replace the previously tested fiberglass-free PTFE copper-clad laminates, along with fiberglass-free hydrocarbon prepregs. The test aims to confirm whether this combination can meet the requirements of the Rubin Ultra NVL576 exchange tray PCB. NVL576 is an eight-rack interconnection solution expected to enter mass production in the second half of 2027.Guo Mingqi stated that preliminary tests conducted to enhance PCB manufacturability show that the fiberglass-free hydrocarbon copper-clad laminate has met the high-frequency electrical requirements of the exchange tray. Its electrical performance lags behind the original PTFE solution but is better than the M9 level solution and exceeds the M10 published specifications. This result does not represent the final material selection, indicating that NVIDIA is still seeking higher PCB manufacturing yields and production efficiency while meeting electrical requirements.Guo Mingqi mentioned that Shengyi Technology is currently the leading supplier for the NVL576 exchange tray material evaluation, with related materials including fiberglass-free PTFE copper-clad laminate SG5300N, fiberglass-free hydrocarbon copper-clad laminate SG1030N, and fiberglass-free hydrocarbon prepreg SIF09. SG1030N and SIF09 still contain a small amount of PTFE. He also stated that once specifications are confirmed and mass production begins, Shengyi Technology is expected to accelerate procurement from Chinese hydrocarbon material suppliers such as Dongcai, Shengquan, and potential supplier GCH Technology.

Bitget launched GetAgent 2.0, enhancing cross-market analysis and dynamic tracking capabilities

Bitget has upgraded its AI assistant GetAgent to version 2.0, expanding the scope of AI research from the cryptocurrency market to include U.S. stocks, CFDs, and on-chain data scenarios, forming a cross-market research framework that covers various assets such as cryptocurrency, U.S. stocks, gold, and crude oil. Users can complete market inquiries, opportunity screening, position diagnostics, and trade reviews through natural language, and combine relevant market data, events, and fundamental information to obtain structured analysis that includes key price levels, participation conditions, risk boundaries, and conditions for judgment failure.In terms of functional interaction, this upgrade further enhances GetAgent's continuous research capabilities. Users can set up regular reports, event reminders, and continuously track market changes based on specific conditions, extending AI from one-time Q&A to ongoing market research and dynamic tracking, transforming fragmented market observations into coherent trading plans.As an important part of Bitget's Agent-native strategy, GetAgent 2.0 is evolving from an information inquiry tool to a continuous research assistant. As UEX covers more cryptocurrency assets and traditional financial markets, GetAgent will also serve as the corresponding intelligent research layer, providing users with cross-asset analysis, regular reports, and continuous market tracking capabilities.

first_img Samsung Electronics adjusts the next-generation DRAM roadmap, naming B1b as D0a

According to a report by ZDNet Korea, Samsung Electronics is adjusting its next-generation DRAM strategy by incorporating the previously project-based B1b into its official roadmap, naming it the first DRAM D0a below 10 nanometers. Previously, D0a referred to vertical transistor DRAM, and this product is now classified separately as D0a-V. This renaming aims to accelerate the introduction of advanced packaging in general DRAM.B1b will manufacture storage cells and peripheral driver circuits on different wafers before bonding them together, using wafer-to-wafer hybrid bonding and directly connecting through copper interconnects. The currently commercialized DRAM is 1c, which is the 6th generation 10 nanometer level, with a line width of about 11 to 12 nanometers; the next generation 1d is the 7th generation 10 nanometer level, with a line width of about 10 to 11 nanometers, considered effectively the last 10 nanometer level product, with the related line width being a marketing term rather than an actual physical size. Vertical transistors can arrange transistors within the cell vertically, reducing the cell area from 6F² to 4F², but they need to address high aspect ratio etching and leakage current, making development more challenging. Wafer-to-wafer hybrid bonding has already been mass-produced in CMOS image sensors and high-stacking NAND.Samsung Electronics is evaluating the use of B1b for the 8th generation high bandwidth memory HBM5. HBM5 is expected to be mass-produced around 2029, aiming to increase operating speed by more than 50% compared to HBM4E. Industry estimates suggest that D0a DRAM based on B1b will be commercially available in about two years, with specific mass production investment schedules likely to be determined by mid-next year.
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