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first_img Samsung Electronics executive: It is expected that HBM will account for nearly 30% of DRAM wafer production capacity next year

According to a report by the Financial Associated Press citing local media on September 29, Samsung Electronics Executive Vice President Kim Taewoo stated that HBM is expected to account for nearly 30% of the total wafer capacity of DRAM manufacturers next year, up from the current ratio of about 20%. He mentioned that HBM competes with traditional DRAM for the same batch of wafer capacity, and increasing HBM output may squeeze the supply of traditional DRAM.TrendForce previously predicted that by the end of 2027, the HBM wafer input from the three major global HBM suppliers will account for about 30% of the total DRAM wafer input, but in terms of storage capacity, it will only contribute about 13% of the total DRAM supply. Additionally, according to media reports on September 20, Samsung began mass production and shipment of HBM4 in February this year and provided 12-layer HBM4E samples to customers including NVIDIA in May; the industry expects Samsung's monthly wafer input for HBM to increase from about 180,000 wafers this year to about 250,000 wafers next year.On the same day, TrendForce stated that the demand for AI servers continues, and HBM and general DRAM will still share limited advanced process capacity. The storage supply will remain tight in 2027, and the price expectations for HBM in 2027 have been raised, with an expected year-on-year increase of 121% in the mixed average selling price. Due to limited supply and rising system costs, 8-layer HBM is expected to become a priority evaluation option for several manufacturers in 2027, with its price per Gb expected to be about 10% to 20% higher than that of 12-layer products.

first_img Samsung Electronics accelerates the construction of the first mass production line in Pyeongtaek P5, with the equipment introduction target moved up to the second quarter of next year

According to a report by ZDNet Korea on September 28, Samsung Electronics is accelerating the construction of the first mass production line (Ph1) at the Pyeongtaek Fifth Campus (P5) and is discussing with major equipment manufacturers to move the target for Ph1 equipment installation from the originally planned third quarter of next year to the second quarter of next year. P5 is the next-generation semiconductor production base aimed to be operational by 2028, and the construction of the Ph1 cleanroom began in the third quarter of this year.Samsung Electronics had previously advanced the completion of the P5 Ph1 cleanroom, originally scheduled for early next year, by about six months, so the equipment installation is expected around the third quarter of next year. Industry insiders say that the start time for equipment installation is planned to be moved up from July to August next year to around May to June next year; others have indicated that Samsung has even proposed to deliver equipment in the first quarter of next year for temporary storage at other locations, showing a strong willingness to invest early.Discussions on the investment for the second phase of P5 (Ph2) are also progressing. Currently, Ph1 is more likely to be built as a DRAM and HBM production line, while Ph2 is more likely to be built as an advanced NAND production line, including the tenth generation (V10). Equipment industry insiders say that formal purchase orders have not yet been placed, but Samsung has discussed building Ph2 as a NAND production line with partners, and due to the long equipment delivery cycle, they are requesting to prepare relevant components in advance. Reports indicate that large global tech companies are increasing orders for high-performance DRAM and NAND for AI infrastructure, while storage companies like Samsung have limited production capacity. Samsung stated during the second quarter earnings call in July that unmet demand this year will extend into next year, and the supply shortage next year will be more severe than this year, with shortages expected to continue until 2028.

Cosmos Hub: 1.227 million ATOM has been recovered from the Neutron attack case, with funds temporarily stored at a 4/6 multi-signature address

Cosmos Labs disclosed that on September 22, Neutron encountered a governance attack that led to the theft of liquidity from protocols such as Astroport, with approximately 1.73 million ATOM subsequently transferred by the attacker to Cosmos Hub. The Cosmos Hub itself was not attacked, and user funds were not affected. To prevent the stolen ATOM from being transferred out, Hub validators temporarily paused the network for about 24.5 hours and resumed block production on September 23 based on the patched Gaia v28.3.0.Cosmos Labs stated that during the pause, 1.227 million ATOM remained in the attacker's Hub address. When the network was restored, these were transferred to a 4/6 multi-signature address composed of Nansen, Keplr, Enigma, Silknodes, Kiln, and Polkachu through a one-time change. Previously, about 500,000 ATOM had been exchanged for ETH via THORChain and could not be recovered; another 169,000 ATOM entered the attacker's address after the network was restored due to THORChain refunds and were sold after being transferred to Osmosis. The current multi-signature address holds approximately 1.227 million ATOM, which can only be returned after authorization from a Cosmos Hub governance proposal. The related funds will not be staked, lent, or traded. The Neutron team expects to submit a recovery plan and related governance proposals next week.
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